Diodes
BS170PSTOB
Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
PackageTO-92-3
Current Rating270mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes BS170PSTOB technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
270mA
Current Rating
270mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
60V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
60pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Channels
1
Package Quantity
4000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
625mW
Rds On Max
5R
RoHS Compliant
No
DC Rated Voltage
60V
Weight
0.016oz
Compliance
RoHS
Not Compliant
Datasheet
Diodes BS170PSTOB Datasheet
Download the complete datasheet for Diodes BS170PSTOB to view detailed technical specifications.
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