P-channel JFET with 45V Drain-to-Source Voltage (Vdss) and 230mA Continuous Drain Current (ID). Features 14 Ohms Drain-to-Source Resistance (Rds On Max) and 20V Gate-to-Source Voltage (Vgs). This silicon Metal-oxide Semiconductor FET is housed in a TO-92-3 package for through-hole mounting. It offers a maximum power dissipation of 700mW and operates across a temperature range of -55°C to 150°C. Lead-free and RoHS compliant.
PackageTO-92-3
Current Rating-230mA
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Diodes BS250PSTOA technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 230mA |
| Current Rating | -230mA |
| Drain to Source Resistance | 14R |
| Drain to Source Voltage (Vdss) | 45V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.01mm |
| Input Capacitance | 60pF |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 700mW |
| Rds On Max | 14R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | BS250P |
| DC Rated Voltage | -45V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes BS250PSTOA Datasheet
Download the complete datasheet for Diodes BS250PSTOA to view detailed technical specifications.
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