N-channel JFET, designed for small signal applications. Features a 60V drain-source voltage (Vdss) and 250mA continuous drain current (ID). Offers a low on-resistance of 3.5 Ohms and a gate-source voltage (Vgs) of 20V. Packaged in a SOT-23-3 surface-mount plastic package, this silicon FET operates from -55°C to 150°C with a maximum power dissipation of 300mW. Includes fast switching times with turn-on delay of 2ns and turn-off delay of 5ns.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Diodes BS870-7 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 250mA |
| Current Rating | 250mA |
| Drain to Source Resistance | 3.5R |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 50pF |
| Lead Free | Contains Lead |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 300mW |
| Rds On Max | 5R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Turn-Off Delay Time | 5ns |
| Turn-On Delay Time | 2ns |
| DC Rated Voltage | 60V |
| Weight | 0.000282oz |
| Width | 1.3mm |
| RoHS | Not Compliant |
Download the complete datasheet for Diodes BS870-7 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
