N-channel JFET, designed for small signal applications. Features a 60V drain-source voltage (Vdss) and 250mA continuous drain current (ID). Offers a low on-resistance of 3.5 Ohms and a gate-source voltage (Vgs) of 20V. Packaged in a SOT-23-3 surface-mount plastic package, this silicon FET operates from -55°C to 150°C with a maximum power dissipation of 300mW. Includes fast switching times with turn-on delay of 2ns and turn-off delay of 5ns.
PackageSOT-23-3
Current Rating250mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes BS870-7 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 250mA |
| Current Rating | 250mA |
| Drain to Source Resistance | 3.5R |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 50pF |
| Lead Free | Contains Lead |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 300mW |
| Rds On Max | 5R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Turn-Off Delay Time | 5ns |
| Turn-On Delay Time | 2ns |
| DC Rated Voltage | 60V |
| Weight | 0.000282oz |
| Width | 1.3mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BS870-7 Datasheet
Download the complete datasheet for Diodes BS870-7 to view detailed technical specifications.
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