
N-Channel Silicon Junction Field-Effect Transistor (JFET) designed for small signal applications. Features a 60V Drain-Source Voltage (Vdss) and a continuous drain current (ID) of 250mA. Offers a low Drain-Source On Resistance (Rds On) of 5 Ohms maximum. Packaged in a compact SOT-23 surface mount plastic package with tin-matte contact plating. Operates across a wide temperature range from -55°C to 150°C.
Diodes BS870-7-F technical specifications.
Download the complete datasheet for Diodes BS870-7-F to view detailed technical specifications.
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