N-Channel Silicon Junction Field-Effect Transistor (JFET) designed for small signal applications. Features a 60V Drain-Source Voltage (Vdss) and a continuous drain current (ID) of 250mA. Offers a low Drain-Source On Resistance (Rds On) of 5 Ohms maximum. Packaged in a compact SOT-23 surface mount plastic package with tin-matte contact plating. Operates across a wide temperature range from -55°C to 150°C.
PackageSOT-23
Current Rating250mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes BS870-7-F technical specifications.
General
Package/Case
SOT-23
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
250mA
Current Rating
250mA
Drain to Source Resistance
3.5R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
5R
Dual Supply Voltage
60V
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
50pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
300mW
Radiation Hardening
No
Rds On Max
5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
5ns
Turn-On Delay Time
2ns
DC Rated Voltage
60V
Weight
0.000282oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes BS870-7-F Datasheet
Download the complete datasheet for Diodes BS870-7-F to view detailed technical specifications.
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