N-Channel Silicon JFET for small signal applications. Features 50V drain-source voltage (Vdss) and 500mA continuous drain current (ID). Offers low drain-source on-resistance (Rds On) of 1.8 Ohms. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 600mW. Packaged in a 3-pin SOT-23 surface-mount plastic package, supplied on tape and reel.
PackageSOT-23
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes BSN20-7 technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 50V |
| Fall Time | 8.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 40pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.8R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 9.45ns |
| Turn-On Delay Time | 2.93ns |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes BSN20-7 Datasheet
Download the complete datasheet for Diodes BSN20-7 to view detailed technical specifications.
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