N-Channel Silicon Metal-oxide Semiconductor FET, surface mount, in a 3-pin plastic package. Features 100V drain-to-source breakdown voltage, 170mA continuous drain current, and 6 Ohm drain-to-source resistance. Operates with a gate-to-source voltage up to 20V, offering 8ns turn-on and 13ns turn-off delay times. Maximum power dissipation is 300mW, with an operating temperature range of -55°C to 150°C.
PackageSOT-23-3
Current Rating170mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes BSS123-7 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 170mA |
| Current Rating | 170mA |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 60pF |
| Lead Free | Contains Lead |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 300mW |
| Rds On Max | 6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 100V |
| Weight | 0.000289oz |
| Width | 1.3mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BSS123-7 Datasheet
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