BSS123-7

N-Channel Silicon Metal-oxide Semiconductor FET, surface mount, in a 3-pin plastic package. Features 100V drain-to-source breakdown voltage, 170mA continuous drain current, and 6 Ohm drain-to-source resistance. Operates with a gate-to-source voltage up to 20V, offering 8ns turn-on and 13ns turn-off delay times. Maximum power dissipation is 300mW, with an operating temperature range of -55°C to 150°C.