N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a 100V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 170mA. Offers a low Drain to Source Resistance (Rds On) of 6 Ohms. Packaged in a SOT-23-3 surface mount configuration, this single-element transistor operates within a temperature range of -55°C to 150°C. Includes 10ns turn-on and fall times, with a 15ns turn-off delay.
PackageSOT-23-3
Current Rating170mA
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Diodes BSS123ATC technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
170mA
Current Rating
170mA
Drain to Source Resistance
10R
Drain to Source Voltage (Vdss)
100V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
25pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
10000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
360mW
Rds On Max
6R
Reach SVHC Compliant
Yes
RoHS Compliant
No
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
DC Rated Voltage
100V
Weight
0.000282oz
Width
1.3mm
Compliance
RoHS
Not Compliant
Datasheet
Diodes BSS123ATC Datasheet
Download the complete datasheet for Diodes BSS123ATC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
