
N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a 100V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 170mA. Offers a low Drain to Source Resistance (Rds On) of 6 Ohms. Packaged in a SOT-23-3 surface mount configuration, this single-element transistor operates within a temperature range of -55°C to 150°C. Includes 10ns turn-on and fall times, with a 15ns turn-off delay.
Diodes BSS123ATC technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 170mA |
| Current Rating | 170mA |
| Drain to Source Resistance | 10R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 25pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 360mW |
| Rds On Max | 6R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 100V |
| Weight | 0.000282oz |
| Width | 1.3mm |
| RoHS | Not Compliant |
Download the complete datasheet for Diodes BSS123ATC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
