
N-Channel Silicon Metal-Oxide Semiconductor FET, a surface-mount JFET in a 3-pin plastic package. Features 100V drain-source voltage (Vdss), 170mA continuous drain current (ID), and 6 Ohm drain-source on-resistance (Rds On Max). Operates within -55°C to +150°C with a maximum power dissipation of 200mW. Includes 8ns turn-on delay and 13ns turn-off delay.
Diodes BSS123W-7-F technical specifications.
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