N-Channel Silicon Metal-Oxide Semiconductor FET, a surface-mount JFET in a 3-pin plastic package. Features 100V drain-source voltage (Vdss), 170mA continuous drain current (ID), and 6 Ohm drain-source on-resistance (Rds On Max). Operates within -55°C to +150°C with a maximum power dissipation of 200mW. Includes 8ns turn-on delay and 13ns turn-off delay.
PackageSOT-323
Current Rating170mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes BSS123W-7-F technical specifications.
General
Package/Case
SOT-323
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
170mA
Current Rating
170mA
Drain to Source Resistance
6R
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
6R
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
60pF
Lead Free
Lead Free
Length
2.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
200mW
Radiation Hardening
No
Rds On Max
6R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
13ns
Turn-On Delay Time
8ns
DC Rated Voltage
100V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes BSS123W-7-F Datasheet
Download the complete datasheet for Diodes BSS123W-7-F to view detailed technical specifications.
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