N-Channel Silicon Metal-Oxide Semiconductor FET, a surface-mount JFET in a 3-pin plastic package. Features 100V drain-source voltage (Vdss), 170mA continuous drain current (ID), and 6 Ohm drain-source on-resistance (Rds On Max). Operates within -55°C to +150°C with a maximum power dissipation of 200mW. Includes 8ns turn-on delay and 13ns turn-off delay.
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| Package/Case | SOT-323 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 170mA |
| Current Rating | 170mA |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 6R |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 60pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Rds On Max | 6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 100V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
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