DIODES

BSS138DW-7

Datasheet

N-Channel MOSFET, 50V, 200mA, 3.5R Rds(on), SOT-363

Diodes

BSS138DW-7

Name: BSS138DW-7 Diodes
Brand: Diodes
SKU: BSS138DW-7

N-Channel MOSFET, 50V, 200mA, 3.5R Rds(on), SOT-363

N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element device with a 50V Drain to Source Voltage (Vdss) and 200mA Continuous Drain Current (ID). This surface mount transistor features a 1.4 Ohm Drain to Source Resistance and a 3.5 Ohm Rds On Max. It operates within a temperature range of -55°C to 150°C and offers a 20V Gate to Source Voltage (Vgs). The component is housed in a 6-pin plastic package, SOT-363, with a maximum power dissipation of 200mW.

PackageSOT-363

Current Rating200mA

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Diodes BSS138DW-7 technical specifications.

General

Package/Case	SOT-363
Continuous Drain Current (ID)	200mA
Current Rating	200mA
Drain to Source Resistance	1.4R
Drain to Source Voltage (Vdss)	50V
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	20V
Height	1mm
Input Capacitance	50pF
Lead Free	Contains Lead
Length	2.2mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	200mW
Mount	Surface Mount
Number of Channels	2
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	200mW
Rds On Max	3.5R
Reach SVHC Compliant	No
RoHS Compliant	No
Turn-Off Delay Time	20ns
Turn-On Delay Time	20ns
DC Rated Voltage	50V
Weight	0.000212oz
Width	1.35mm