N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element device with a 50V Drain to Source Voltage (Vdss) and 200mA Continuous Drain Current (ID). This surface mount transistor features a 1.4 Ohm Drain to Source Resistance and a 3.5 Ohm Rds On Max. It operates within a temperature range of -55°C to 150°C and offers a 20V Gate to Source Voltage (Vgs). The component is housed in a 6-pin plastic package, SOT-363, with a maximum power dissipation of 200mW.
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| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 200mA |
| Current Rating | 200mA |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 50V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 50pF |
| Lead Free | Contains Lead |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| Rds On Max | 3.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 50V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Not Compliant |
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