N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for switching applications. Features a 50V Drain-Source Voltage (Vdss) and a continuous drain current (ID) of 200mA. Offers a low Drain-Source On-Resistance (Rds On) of 3.5 Ohms. This surface-mount device is housed in a compact SOT-363 plastic package, suitable for high-density circuit designs. Operates across a wide temperature range from -55°C to 150°C.
PackageSOT-363
Current Rating200mA
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Diodes BSS138DW-7-F technical specifications.
General
Additional Feature
HIGH RELIABILITY
Package/Case
SOT-363
Continuous Drain Current (ID)
200mA
Current Rating
200mA
Drain to Source Resistance
3.5R
Drain to Source Voltage (Vdss)
50V
Drain-source On Resistance-Max
3.5R
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
50pF
JESD-30 Code
R-PDSO-G6
Lead Free
Lead Free
Length
2.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Moisture Sensitivity Level
1
Mount
Surface Mount
Nominal Vgs
1.2V
Number of Channels
2
Number of Elements
2
Package Body Material
Plastic
Package Quantity
3000
Package Shape
Rectangular
Packaging
Tape and Reel
Peak Reflow Temperature (Cel)
260°C
Polarity
N-CHANNEL
Power Dissipation
200mW
Rds On Max
3.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Threshold Voltage
1.2V
Time @ Peak Reflow Temperature-Max (s)
10s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-Off Delay Time
20ns
Turn-On Delay Time
20ns
DC Rated Voltage
50V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes BSS138DW-7-F Datasheet
Download the complete datasheet for Diodes BSS138DW-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
