DIODES

BSS138DW-7-F

Datasheet

N-Channel MOSFET, 50V, 200mA, 3.5R, SOT-363

Diodes

BSS138DW-7-F

Name: BSS138DW-7-F Diodes
Brand: Diodes
SKU: BSS138DW-7-F

N-Channel MOSFET, 50V, 200mA, 3.5R, SOT-363

N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for switching applications. Features a 50V Drain-Source Voltage (Vdss) and a continuous drain current (ID) of 200mA. Offers a low Drain-Source On-Resistance (Rds On) of 3.5 Ohms. This surface-mount device is housed in a compact SOT-363 plastic package, suitable for high-density circuit designs. Operates across a wide temperature range from -55°C to 150°C.

PackageSOT-363

Current Rating200mA

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Diodes BSS138DW-7-F technical specifications.

General

Additional Feature	HIGH RELIABILITY
Package/Case	SOT-363
Continuous Drain Current (ID)	200mA
Current Rating	200mA
Drain to Source Resistance	3.5R
Drain to Source Voltage (Vdss)	50V
Drain-source On Resistance-Max	3.5R
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	20V
Height	1mm
Input Capacitance	50pF
JESD-30 Code	R-PDSO-G6
Lead Free	Lead Free
Length	2.2mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	200mW
Moisture Sensitivity Level	1
Mount	Surface Mount
Nominal Vgs	1.2V
Number of Channels	2
Number of Elements	2
Package Body Material	Plastic
Package Quantity	3000
Package Shape	Rectangular
Packaging	Tape and Reel
Peak Reflow Temperature (Cel)	260°C
Polarity	N-CHANNEL
Power Dissipation	200mW
Rds On Max	3.5R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Surface Mount	Yes
Terminal Finish	Tin
Terminal Form	Gull Wing
Terminal Position	DUAL
Threshold Voltage	1.2V
Time @ Peak Reflow Temperature-Max (s)	10s
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Turn-Off Delay Time	20ns
Turn-On Delay Time	20ns
DC Rated Voltage	50V
Weight	0.000212oz
Width	1.35mm