
N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for switching applications. Features a 50V Drain-Source Voltage (Vdss) and a continuous drain current (ID) of 200mA. Offers a low Drain-Source On-Resistance (Rds On) of 3.5 Ohms. This surface-mount device is housed in a compact SOT-363 plastic package, suitable for high-density circuit designs. Operates across a wide temperature range from -55°C to 150°C.
Diodes BSS138DW-7-F technical specifications.
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