N-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a 50V Drain-to-Source Voltage (Vdss) and a continuous drain current of 200mA. Offers a low Drain-to-Source On-Resistance (Rds On) of 3.5 Ohms maximum. Packaged in a compact SOT-23 surface-mount case with tin, matte contact plating. Operates across a wide temperature range from -55°C to 150°C.
PackageSOT-23
Current Rating200mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes BSS138TA technical specifications.
General
Package/Case
SOT-23
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
200mA
Current Rating
200mA
Drain to Source Resistance
1.4R
Drain to Source Voltage (Vdss)
50V
Drain-source On Resistance-Max
3.5R
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
50pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Nominal Vgs
1.5V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
350mW
Rds On Max
3.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1.5V
Turn-Off Delay Time
20ns
Turn-On Delay Time
20ns
DC Rated Voltage
50V
Weight
0.000282oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes BSS138TA Datasheet
Download the complete datasheet for Diodes BSS138TA to view detailed technical specifications.
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