N-Channel Silicon Metal-Oxide Semiconductor FET, designed for small signal applications. Features a 50V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 200mA. Offers a low Drain-Source On-Resistance (Rds On) of 3.5 Ohms maximum. Packaged in a compact SOT-323 surface mount plastic package. Operates across a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
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Diodes BSS138W-7-F technical specifications.
| Package/Case | SOT-323 |
| Continuous Drain Current (ID) | 200mA |
| Current Rating | 200mA |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 3.5R |
| Dual Supply Voltage | 50V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| Rds On Max | 3.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 20ns |
| Voltage | 50V |
| DC Rated Voltage | 50V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
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