PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 40V. Operates with a transition frequency of 250MHz and a gain bandwidth product of 85MHz. Packaged in a TO-236-3 surface mount case, this component offers a maximum power dissipation of 300mW and an operating temperature range of -55°C to 150°C.
PackageTO-236-3
Current Rating-100mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BSS63TA technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 110V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 750mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 85MHz |
| Height | 1mm |
| Lead Free | Contains Lead |
| Length | 2.9mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Polarity | PNP |
| RoHS Compliant | No |
| Series | BSS63 |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -100V |
| Weight | 0.00709oz |
| Width | 1.3mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BSS63TA Datasheet
Download the complete datasheet for Diodes BSS63TA to view detailed technical specifications.
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