Dual N-channel and P-channel silicon Metal-oxide Semiconductor FET in a plastic package. Features 50V drain-to-source voltage (Vdss), 130mA continuous drain current (ID), and 4.4 Ohm drain-to-source resistance. Surface mountable with a 10ns turn-on delay and 18ns turn-off delay. Operating temperature range from -55°C to 150°C with 200mW maximum power dissipation.
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Diodes BSS8402DW-7 technical specifications.
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 130mA |
| Current Rating | 115mA |
| Drain to Source Resistance | 4.4R |
| Drain to Source Voltage (Vdss) | 50V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 50pF |
| Lead Free | Contains Lead |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Power Dissipation | 200mW |
| Rds On Max | 7.5R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Not Compliant |
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