P-channel, dual-element silicon MOSFET transistor for surface mount applications. Features a 50V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 130mA. Offers a low on-resistance (Rds On Max) of 10 Ohms and a maximum power dissipation of 300mW. Packaged in a compact SOT-363 plastic package with dimensions of 2.2mm (L) x 1.35mm (W) x 1mm (H). Operating temperature range from -55°C to 150°C.
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Diodes BSS84DW-7 technical specifications.
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 130mA |
| Current Rating | -130mA |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 50V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 45pF |
| Lead Free | Contains Lead |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 300mW |
| Rds On Max | 10R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -50V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Not Compliant |
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