P-Channel, Silicon, Metal-Oxide Semiconductor FET designed for switching applications. Features a -50V Drain to Source Voltage (Vdss) and a continuous drain current of 130mA. Offers a low Drain-source On Resistance (Rds On) of 10 Ohms maximum. Packaged in a compact SOT-363 (6-pin) surface mount plastic package with tin matte contact plating. Operates across a wide temperature range from -55°C to 150°C.
PackageSOT-363
Current Rating-130mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes BSS84DW-7-F technical specifications.
General
Package/Case
SOT-363
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
130mA
Current Rating
-130mA
Drain to Source Resistance
6R
Drain to Source Voltage (Vdss)
-50V
Drain-source On Resistance-Max
10R
Dual Supply Voltage
-50V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
45pF
JESD-30 Code
R-PDSO-G6
Lead Free
Lead Free
Length
2.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Moisture Sensitivity Level
1
Mount
Surface Mount
Nominal Vgs
-1.6V
Number of Channels
2
Number of Elements
2
Package Body Material
Plastic
Package Quantity
3000
Package Shape
Rectangular
Packaging
Tape and Reel
Peak Reflow Temperature (Cel)
260°C
Polarity
P-CHANNEL
Power Dissipation
300mW
Radiation Hardening
No
Rds On Max
10R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Termination
SMD/SMT
Threshold Voltage
-1.6V
Time @ Peak Reflow Temperature-Max (s)
10s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-Off Delay Time
18ns
Turn-On Delay Time
10ns
DC Rated Voltage
-50V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes BSS84DW-7-F Datasheet
Download the complete datasheet for Diodes BSS84DW-7-F to view detailed technical specifications.
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