P-Channel, Silicon, Metal-Oxide Semiconductor FET designed for switching applications. Features a -50V Drain to Source Voltage (Vdss) and a continuous drain current of 130mA. Offers a low Drain-source On Resistance (Rds On) of 10 Ohms maximum. Packaged in a compact SOT-363 (6-pin) surface mount plastic package with tin matte contact plating. Operates across a wide temperature range from -55°C to 150°C.
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Diodes BSS84DW-7-F technical specifications.
| Package/Case | SOT-363 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 130mA |
| Current Rating | -130mA |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | -50V |
| Drain-source On Resistance-Max | 10R |
| Dual Supply Voltage | -50V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 45pF |
| JESD-30 Code | R-PDSO-G6 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Moisture Sensitivity Level | 1 |
| Mount | Surface Mount |
| Nominal Vgs | -1.6V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Quantity | 3000 |
| Package Shape | Rectangular |
| Packaging | Tape and Reel |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity | P-CHANNEL |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Rds On Max | 10R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Termination | SMD/SMT |
| Threshold Voltage | -1.6V |
| Time @ Peak Reflow Temperature-Max (s) | 10s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -50V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
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