
P-channel, silicon, surface-mount JFET with 50V drain-source voltage and 130mA continuous drain current. Features a 10 Ohm maximum drain-source on-resistance and 40pF input capacitance. Packaged in a 3-pin SOT-23 case with tin, matte contact plating. Operates from -55°C to 150°C with 300mW power dissipation.
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Diodes BSS84TA technical specifications.
| Package/Case | SOT-23-3 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 130mA |
| Current Rating | -130mA |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 10R |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 40pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Rds On Max | 10R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -50V |
| Weight | 0.000282oz |
| Width | 1.3mm |
| RoHS | Compliant |
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