P-channel, silicon, surface-mount JFET with 50V drain-source voltage and 130mA continuous drain current. Features a 10 Ohm maximum drain-source on-resistance and 40pF input capacitance. Packaged in a 3-pin SOT-23 case with tin, matte contact plating. Operates from -55°C to 150°C with 300mW power dissipation.
PackageSOT-23-3
Current Rating-130mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes BSS84TA technical specifications.
General
Package/Case
SOT-23-3
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
130mA
Current Rating
-130mA
Drain to Source Resistance
6R
Drain to Source Voltage (Vdss)
50V
Drain-source On Resistance-Max
10R
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
40pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
300mW
Radiation Hardening
No
Rds On Max
10R
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
18ns
Turn-On Delay Time
10ns
DC Rated Voltage
-50V
Weight
0.000282oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes BSS84TA Datasheet
Download the complete datasheet for Diodes BSS84TA to view detailed technical specifications.
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