PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 30V, with a maximum collector base voltage of 200V. Operates with a transition frequency of 15MHz and a maximum power dissipation of 1W. Packaged in a TO-243AA surface-mount case, this component is designed for a wide operating temperature range from -65°C to 150°C.
PackageTO-243AA
Current Rating-500mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BST15TA technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 200V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Gain Bandwidth Product | 15MHz |
| Height | 1.6mm |
| Lead Free | Contains Lead |
| Length | 4.6mm |
| Max Breakdown Voltage | 200V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 15MHz |
| DC Rated Voltage | -200V |
| Weight | 0.004603oz |
| Width | 2.6mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BST15TA Datasheet
Download the complete datasheet for Diodes BST15TA to view detailed technical specifications.
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