NPN bipolar junction transistor for surface mount applications. Features a 350V collector-emitter breakdown voltage (VCEO) and 500mA continuous collector current. Operates with a 70MHz gain bandwidth product and a maximum power dissipation of 1W. Housed in a SOT-89 package with tin, matte contact plating, this lead-free component is RoHS and REACH SVHC compliant.
Diodes BST39TA technical specifications.
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