This silicon zener diode features a maximum operating temperature of 200 degrees Celsius. It has a unidirectional polarity and is constructed from a single silicon diode element. The device is packaged in a DO-41 axial leaded format. The maximum power dissipation is 1.3 watts.
Diodes BZX85C4V7 technical specifications.
| Max Operating Temperature | 200 |
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-41 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | ZENER DIODE |
| Power Dissipation-Max | 1.3 |
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Diodes BZX85C4V7 to view detailed technical specifications.
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