
Bidirectional transient voltage suppressor diode, 200W peak reverse power dissipation, 55V repetitive peak reverse voltage. Features a 57V minimum breakdown voltage and a maximum clamping voltage of 100V. This silicon diode element operates bidirectionally with a maximum power dissipation of 0.25W. Designed with two terminals and a single element, it functions across an operating temperature range of -65°C to 150°C.
Diodes D55V0M1B2WS-7 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 55 |
| Breakdown Voltage-Min | 57 |
| Non-rep Peak Rev Power Dis-Max | 200 |
| Clamping Voltage-Max | 100 |
| Breakdown Voltage-Nom | 57 |
| Power Dissipation-Max | 0.25 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Diodes D55V0M1B2WS-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.