Bidirectional transient voltage suppressor diode, featuring a 55V repetitive peak reverse voltage and a minimum breakdown voltage of 57V. This silicon diode element offers a maximum non-repetitive peak reverse power dissipation of 200W and a maximum power dissipation of 0.25W. It operates across a wide temperature range from -65°C to 150°C and has two terminals in a dual terminal position.
PolarityBIDIRECTIONAL
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Technical Specifications
Diodes D55V0M1B2WSQ-7 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-65
Terminal Position
DUAL
Number of Elements
1
Polarity
BIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
55
Breakdown Voltage-Min
57
Non-rep Peak Rev Power Dis-Max
200
Power Dissipation-Max
0.25
Compliance
RoHS
Yes
REACH
Compliant
Military Spec
False
Datasheet
Diodes D55V0M1B2WSQ-7 Datasheet
Download the complete datasheet for Diodes D55V0M1B2WSQ-7 to view detailed technical specifications.
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