Bidirectional transient voltage suppressor diode, featuring a 55V repetitive peak reverse voltage and a minimum breakdown voltage of 57V. This silicon diode element offers a maximum non-repetitive peak reverse power dissipation of 200W and a maximum power dissipation of 0.25W. It operates across a wide temperature range from -65°C to 150°C and has two terminals in a dual terminal position.
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Diodes D55V0M1B2WSQ-7 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 55 |
| Breakdown Voltage-Min | 57 |
| Non-rep Peak Rev Power Dis-Max | 200 |
| Power Dissipation-Max | 0.25 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Diodes D55V0M1B2WSQ-7 to view detailed technical specifications.
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