PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-223 plastic package. Features a maximum continuous collector current of -1A and a collector emitter breakdown voltage of 80V. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 200MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. Surface mountable with RoHS compliance.
PackageSOT-223
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DCP53-16-13 technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 200MHz |
| Height | 1.6mm |
| hFE Min | 25 |
| Length | 6.5mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Weight | 0.000282oz |
| Width | 3.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DCP53-16-13 Datasheet
Download the complete datasheet for Diodes DCP53-16-13 to view detailed technical specifications.
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