NPN silicon bipolar junction transistor (BJT) for small signal applications. Features 80V collector-emitter breakdown voltage (VCEO) and 1A continuous collector current (IC). Operates with a maximum power dissipation of 1W and a transition frequency of 200MHz. Packaged in a SOT-223 surface-mount plastic package.
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Diodes DCP56-13 technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 1.65mm |
| hFE Min | 25 |
| Length | 6.7mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
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