PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and 60V Collector-Base Voltage (VCBO). Offers a maximum collector current of 1A and a transition frequency of 200MHz. Packaged in a SOT-89 surface mount case, this 1-element transistor operates from -55°C to 150°C with a power dissipation of 1W.
Frequency200MHz
PackageSOT-89
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DCX52-13 technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 1.5mm |
| hFE Min | 63 |
| Length | 4.5mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Weight | 0.001834oz |
| Width | 2.48mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DCX52-13 Datasheet
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