DIODES

DCX56-16-13

Datasheet

NPN BJT Transistor, 80V VCEO, 1A IC, 200MHz, SOT-89

Diodes

DCX56-16-13

Name: DCX56-16-13 Diodes
Brand: Diodes
SKU: DCX56-16-13

NPN BJT Transistor, 80V VCEO, 1A IC, 200MHz, SOT-89

NPN bipolar junction transistor featuring a 1W power dissipation and 80V collector-emitter breakdown voltage. This surface mount device operates with a maximum collector current of 1A and a transition frequency of 200MHz. It offers a minimum DC current gain (hFE) of 63 and a maximum operating temperature of 150°C. Packaged in a SOT-89 3-lead plastic housing, this RoHS compliant component is suitable for a wide range of electronic applications.

Frequency200MHz

PackageSOT-89

MountingSurface Mount

PolarityNPN

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Technical Specifications

Diodes DCX56-16-13 technical specifications.

General

Package/Case	SOT-89
Collector Base Voltage (VCBO)	100V
Collector Emitter Breakdown Voltage	80V
Collector Emitter Voltage (VCEO)	80V
Collector-emitter Voltage-Max	500mV
Emitter Base Voltage (VEBO)	5V
Frequency	200MHz
Gain Bandwidth Product	200MHz
Height	1.5mm
hFE Min	63
Length	4.5mm
Max Breakdown Voltage	80V
Max Collector Current	1A
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1W
Mount	Surface Mount
Number of Elements	1
Package Quantity	1
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	1W
Radiation Hardening	No
RoHS Compliant	Yes
Transition Frequency	200MHz
Weight	0.001834oz
Width	2.48mm