DIODES

DCX68-25-13

Datasheet

NPN BJT Transistor, 1A I(C), 20V V(BR)CEO, 300MHz, SOT-89

Diodes

DCX68-25-13

Name: DCX68-25-13 Diodes
Brand: Diodes
SKU: DCX68-25-13

NPN BJT Transistor, 1A I(C), 20V V(BR)CEO, 300MHz, SOT-89

NPN bipolar junction transistor (BJT) for small signal applications. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 20V. Operates with a transition frequency of 330MHz and a maximum power dissipation of 1W. Packaged in a SOT-89 surface-mount plastic package, this silicon transistor is RoHS and REACH SVHC compliant.

Frequency300MHz

PackageSOT-89

MountingSurface Mount

PolarityNPN

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Technical Specifications

Diodes DCX68-25-13 technical specifications.

General

Package/Case	SOT-89
Collector Base Voltage (VCBO)	25V
Collector Emitter Breakdown Voltage	20V
Collector Emitter Voltage (VCEO)	20V
Collector-emitter Voltage-Max	500mV
Emitter Base Voltage (VEBO)	5V
Frequency	300MHz
Gain Bandwidth Product	300MHz
Height	1.5mm
Length	4.5mm
Max Breakdown Voltage	20V
Max Collector Current	1A
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1W
Mount	Surface Mount
Number of Elements	1
Package Quantity	2500
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	1W
Radiation Hardening	No
Reach SVHC Compliant	Yes
RoHS Compliant	Yes
Transition Frequency	330MHz
Weight	0.001834oz
Width	2.5mm