PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 20V. Offers a minimum DC current gain (hFE) of 50 and a transition frequency of 200MHz. Packaged in a TO-243AA surface mount plastic package, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
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Diodes DCX69-16-13 technical specifications.
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 200MHz |
| Height | 1.5mm |
| hFE Min | 50 |
| Length | 4.5mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Weight | 0.001834oz |
| Width | 2.48mm |
| RoHS | Compliant |
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