NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a maximum continuous collector current of 100mA. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW. This silicon transistor is housed in a 6-pin plastic package (SOT-363) suitable for surface mounting. Includes a minimum hFE of 100 and a transition frequency of 250MHz.
PackageSOT-363
Current Rating100mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes DDC114TU-7 technical specifications.
General
| Package/Case | SOT-363 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Contains Lead |
| Length | 2.2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| Weight | 0.000265oz |
| Width | 1.35mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes DDC114TU-7 Datasheet
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