NPN bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 100mA, with a maximum output current of 70mA. Operates within a temperature range of -55°C to 150°C and offers a minimum hFE of 68. Packaged in a compact SOT-563 surface mount plastic package, this lead-free and RoHS compliant component is supplied on tape and reel.
PackageSOT-563
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes DDC114YH-7 technical specifications.
General
| Package/Case | SOT-563 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Height | 0.6mm |
| hFE Min | 68 |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 70mA |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Weight | 0.000106oz |
| Width | 1.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DDC114YH-7 Datasheet
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