PNP bipolar junction transistor (BJT) for small signal applications. Features a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. This silicon transistor operates with a maximum power dissipation of 200mW and a transition frequency of 250MHz. Packaged in a 3-lead SOT-323 surface mount plastic package, it is RoHS compliant and lead-free.
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| Package/Case | SOT-323 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -40V |
| Height | 1mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 50mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -50V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
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