PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector Emitter Breakdown Voltage and a maximum continuous collector current of 100mA. Offers a minimum hFE of 68 and a transition frequency of 250MHz. Packaged in a compact SOT-323 surface mount plastic package, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
PackageSOT-323
Current Rating-100mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DDTA144EUA-7-F technical specifications.
General
| Package/Case | SOT-323 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | -100mA |
| Height | 1mm |
| hFE Min | 68 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -50V |
| Weight | 0.000212oz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DDTA144EUA-7-F Datasheet
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