NPN bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 100mA. This silicon transistor operates within a temperature range of -55°C to 150°C and has a transition frequency of 250MHz. Packaged in a compact SC-59 (TO-236-3) surface-mount plastic case, it is lead-free and RoHS compliant.
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Diodes DDTC114EKA-7-F technical specifications.
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Height | 1.3mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Weight | 0.000282oz |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DDTC114EKA-7-F to view detailed technical specifications.
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