NPN bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and a 100mA continuous collector current. Operates with a maximum collector-emitter saturation voltage of 300mV and an emitter-base voltage of 12V. This silicon transistor offers a minimum DC current gain (hFE) of 20 and a transition frequency of 250MHz. Packaged in a 3-lead SOT-23 plastic surface-mount case, it is RoHS compliant and lead-free.
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Diodes DDTC123ECA-7-F technical specifications.
| Package/Case | SOT-23-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 12V |
| Height | 1mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
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