NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of 100mA. Operates with a minimum hFE of 100 and a transition frequency of 250MHz. Housed in a compact SOT-23-3 surface mount plastic package, this RoHS compliant component is suitable for a wide temperature range from -55°C to 150°C.
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Diodes DDTC123TCA-7-F technical specifications.
| Package/Case | SOT-23-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
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