NPN silicon bipolar junction transistor featuring a 50V collector-emitter breakdown voltage and 100mA continuous collector current. This surface mount device offers a maximum power dissipation of 200mW and a transition frequency of 250MHz. It operates within a temperature range of -55°C to 150°C and is housed in a compact SOT-23-3 plastic package. The transistor is lead-free, RoHS compliant, and supplied on tape and reel.
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Diodes DDTC143TCA-7-F technical specifications.
| Package/Case | SOT-23-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
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