NPN silicon bipolar junction transistor for surface mount applications. Features a 50V collector-emitter breakdown voltage and 500mA continuous collector current. Operates within a temperature range of -55°C to 150°C and offers a minimum hFE of 56. Packaged in a compact SOT-23-3 plastic package, this RoHS compliant component is supplied on tape and reel.
PackageSOT-23-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes DDTD123YC-7-F technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1mm |
| hFE Min | 56 |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 500mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DDTD123YC-7-F Datasheet
Download the complete datasheet for Diodes DDTD123YC-7-F to view detailed technical specifications.
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