NPN silicon bipolar junction transistor (BJT) for general-purpose applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a maximum collector current (IC) of 3A. Offers a transition frequency (fT) of 105MHz and a maximum power dissipation of 1.2W. Packaged in a 4-pin SOT-223 surface-mount plastic case, this lead-free and RoHS-compliant component operates from -55°C to 150°C.
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Diodes DJT4031N-13 technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 105MHz |
| Height | 1.6mm |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Frequency | 105MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 105MHz |
| Type | General Purpose |
| Weight | 0.000282oz |
| Width | 3.5mm |
| RoHS | Compliant |
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