DJT4031N-13

NPN BJT Transistor, 40V VCEO, 3A IC, 105MHz, SOT-223

NPN silicon bipolar junction transistor (BJT) for general-purpose applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a maximum collector current (IC) of 3A. Offers a transition frequency (fT) of 105MHz and a maximum power dissipation of 1.2W. Packaged in a 4-pin SOT-223 surface-mount plastic case, this lead-free and RoHS-compliant component operates from -55°C to 150°C.

Frequency105MHz

PackageSOT-223

MountingSurface Mount

PolarityNPN

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Technical Specifications

Diodes DJT4031N-13 technical specifications.

General

Package/Case	SOT-223
Collector Base Voltage (VCBO)	40V
Collector Emitter Breakdown Voltage	40V
Collector Emitter Saturation Voltage	300mV
Collector Emitter Voltage (VCEO)	40V
Collector-emitter Voltage-Max	300mV
Emitter Base Voltage (VEBO)	6V
Gain Bandwidth Product	105MHz
Height	1.6mm
Lead Free	Lead Free
Length	6.5mm
Max Breakdown Voltage	40V
Max Collector Current	3A
Max Frequency	105MHz
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.2W
Mount	Surface Mount
Package Quantity	2500
Packaging	Tape and Reel
Polarity	NPN
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Transition Frequency	105MHz
Type	General Purpose
Weight	0.000282oz
Width	3.5mm