Dual NPN/PNP silicon bipolar junction transistor (BJT) in a 6-pin SOT-26 surface mount package. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 60V. Offers a minimum DC current gain (hFE) of 35 and a transition frequency of 200MHz. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 300mW.
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Diodes DMB2227A-7 technical specifications.
| Package/Case | SOT-26 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 300MHz |
| Height | 1.1mm |
| hFE Min | 35 |
| Length | 3mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Weight | 0.001058oz |
| Width | 1.6mm |
| RoHS | Compliant |
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