Dual-element, N-channel and P-channel silicon Metal-oxide Semiconductor FET for surface mounting in a SOT-363 package. Features a continuous drain current of 540mA, drain-source voltage up to 20V, and a maximum drain-source on resistance of 550mR. Operates across a temperature range of -65°C to 150°C with a power dissipation of 250mW. This RoHS and REACH SVHC compliant component offers an input capacitance of 150pF.
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Diodes DMC2004DWK-7 technical specifications.
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 540mA |
| Drain to Source Resistance | 900mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 0.9mR |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
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