Dual N-Channel and P-Channel Silicon Metal-Oxide Semiconductor FET for small signal applications. Features 30V Drain to Source Voltage (Vdss) and 4.2A Continuous Drain Current (ID). Offers low Drain to Source Resistance (Rds On Max) of 20mR. Packaged in a surface-mount SOP-8 case with dimensions of 4.95mm length, 3.95mm width, and 1.5mm height. Operates from -55°C to 150°C and is lead-free and RoHS compliant.
Sign in to ask questions about the Diodes DMC3025LSD-13 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes DMC3025LSD-13 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Resistance | 38mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12.4ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 501pF |
| Lead Free | Lead Free |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Rds On Max | 20mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 28.4ns |
| Turn-On Delay Time | 6.8ns |
| Weight | 0.00261oz |
| Width | 3.95mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMC3025LSD-13 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
