N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a continuous drain current of 630mA and a drain-to-source voltage of 20V. Offers a maximum drain-source on-resistance of 400mR. Operates within a temperature range of -55°C to 150°C and is packaged in a 3-pin SOT-523 surface-mount plastic package. RoHS compliant and lead-free.
PackageSOT-523
MountingSurface Mount
PolarityN-CHANNEL
Power280mW
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Technical Specifications
Diodes DMG1012T-7 technical specifications.
General
Package/Case
SOT-523
Continuous Drain Current (ID)
630mA
Drain to Source Resistance
300mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
400MR
Fall Time
12.3ns
FET Type
1 N-Channel
Gate to Source Voltage (Vgs)
6V
Height
0.8mm
Input Capacitance
60.67pF
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
280mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
280mW
Radiation Hardening
No
Rds On Max
400mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1V
Turn-Off Delay Time
26.7ns
Turn-On Delay Time
5.1ns
Weight
7.1E-05oz
Width
0.85mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMG1012T-7 Datasheet
Download the complete datasheet for Diodes DMG1012T-7 to view detailed technical specifications.
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