N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a continuous drain current of 630mA and a drain-to-source voltage of 20V. Offers a maximum drain-source on-resistance of 400mR. Operates within a temperature range of -55°C to 150°C and is packaged in a 3-pin SOT-523 surface-mount plastic package. RoHS compliant and lead-free.
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| Package/Case | SOT-523 |
| Continuous Drain Current (ID) | 630mA |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 400MR |
| Fall Time | 12.3ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 0.8mm |
| Input Capacitance | 60.67pF |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 280mW |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 26.7ns |
| Turn-On Delay Time | 5.1ns |
| Weight | 7.1E-05oz |
| Width | 0.85mm |
| RoHS | Compliant |
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