N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a 20V Drain to Source Voltage (Vdss) and 1A Continuous Drain Current (ID). Offers a low Drain to Source Resistance (Rds On) of 300mR. Operates within a temperature range of -55°C to 150°C and is housed in a compact SOT-323 surface mount package. Compliant with RoHS standards.
PackageSOT-323
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Diodes DMG1012UW-7 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Diodes DMG1012UW-7 technical specifications.
General
| Package/Case | SOT-323 |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 12.3ns |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 1mm |
| Input Capacitance | 60.67pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26.7ns |
| Turn-On Delay Time | 5.1ns |
| Weight | 0.000212oz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG1012UW-7 Datasheet
Download the complete datasheet for Diodes DMG1012UW-7 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
