N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a 20V Drain to Source Voltage (Vdss) and 1A Continuous Drain Current (ID). Offers a low Drain to Source Resistance (Rds On) of 300mR. Operates within a temperature range of -55°C to 150°C and is housed in a compact SOT-323 surface mount package. Compliant with RoHS standards.
PackageSOT-323
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMG1012UW-7 technical specifications.
General
| Package/Case | SOT-323 |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 12.3ns |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 1mm |
| Input Capacitance | 60.67pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26.7ns |
| Turn-On Delay Time | 5.1ns |
| Weight | 0.000212oz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG1012UW-7 Datasheet
Download the complete datasheet for Diodes DMG1012UW-7 to view detailed technical specifications.
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