P-channel, single-element silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a continuous drain current of 820mA and a drain-source voltage of 20V. Offers a maximum drain-source on-resistance of 750mΩ. Packaged in a SOT-323 surface-mount plastic package, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Diodes DMG1013UW-7 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-323 |
| Continuous Drain Current (ID) | 820mA |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 750mR |
| Fall Time | 20.7ns |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 1mm |
| Input Capacitance | 59.76pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 750mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 28.4ns |
| Turn-On Delay Time | 5.1ns |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMG1013UW-7 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
