Surface mount N-channel and P-channel dual JFET with 20V Drain to Source Voltage (Vdss) and 845mA Continuous Drain Current (ID). Features low Drain-source On Resistance (Rds On) up to 450mR, ideal for small signal applications. Operates across a wide temperature range from -55°C to 150°C. Packaged in an ultra-small SOT-363 plastic package, this RoHS compliant component offers fast switching speeds with turn-on delay times as low as 5.1ns.
PackageSOT-363
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power330mW
Quick Jump:
Technical Specifications
Diodes DMG1016UDW-7 technical specifications.
General
Package/Case
SOT-363
Continuous Drain Current (ID)
845mA
Drain to Source Resistance
1.05R
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
750mR
Fall Time
12.3ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
6V
Height
1mm
Input Capacitance
60.67pF
Lead Free
Lead Free
Length
2.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
330mW
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Power Dissipation
330mW
Radiation Hardening
No
Rds On Max
450mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1V
Turn-Off Delay Time
26.7ns
Turn-On Delay Time
5.1ns
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMG1016UDW-7 Datasheet
Download the complete datasheet for Diodes DMG1016UDW-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
