N-Channel Silicon JFET, 2-Element, Metal-oxide Semiconductor FET, designed for small signal applications. Features a 60V Drain to Source Voltage (Vdss) and 410mA Continuous Drain Current (ID). Offers a low Drain to Source Resistance (Rds On Max) of 1.8 Ohms. Operates across a wide temperature range from -55°C to 150°C. Packaged in a compact SOT-563 surface mount plastic package, ideal for space-constrained designs. RoHS and REACH SVHC compliant.
PackageSOT-563
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMG1026UV-7 technical specifications.
General
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 410mA |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 16.3ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.6mm |
| Input Capacitance | 32pF |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 580mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.8R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26.4ns |
| Turn-On Delay Time | 3.4ns |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG1026UV-7 Datasheet
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