N-Channel Silicon Metal-oxide Semiconductor FET, a single-element surface mount transistor in a SOT-23 plastic package. Features 20V drain-source breakdown voltage, 5.47A continuous drain current, and a maximum drain-source on-resistance of 29mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 740mW. Includes a threshold voltage of 950mV and turn-on/turn-off delay times of 6.5ns and 21.6ns respectively.
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| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 5.47A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 29mR |
| Fall Time | 5.3ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.1mm |
| Input Capacitance | 434.7pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 740mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 740mW |
| Radiation Hardening | No |
| Rds On Max | 29mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 950mV |
| Turn-Off Delay Time | 21.6ns |
| Turn-On Delay Time | 6.5ns |
| Width | 1.4mm |
| RoHS | Compliant |
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