N-Channel Silicon Metal-oxide Semiconductor FET, a single-element surface mount transistor in a SOT-23 plastic package. Features 20V drain-source breakdown voltage, 5.47A continuous drain current, and a maximum drain-source on-resistance of 29mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 740mW. Includes a threshold voltage of 950mV and turn-on/turn-off delay times of 6.5ns and 21.6ns respectively.
PackageSOT-23
MountingSurface Mount
PolarityN-CHANNEL
Power740mW
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Technical Specifications
Diodes DMG3420U-7 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
5.47A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
21mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
29mR
Fall Time
5.3ns
Gate to Source Voltage (Vgs)
12V
Height
1.1mm
Input Capacitance
434.7pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
740mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
740mW
Radiation Hardening
No
Rds On Max
29mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
950mV
Turn-Off Delay Time
21.6ns
Turn-On Delay Time
6.5ns
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMG3420U-7 Datasheet
Download the complete datasheet for Diodes DMG3420U-7 to view detailed technical specifications.
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