N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 7.62A continuous drain current. This surface-mount device is housed in an 8-pin DFN EP package with a 3x3mm footprint and 0.65mm pin pitch. Key specifications include a maximum drain-source on-resistance of 15mΩ at 10V, typical gate charge of 18.85nC at 10V, and typical input capacitance of 867pF at 10V. Maximum power dissipation is 990mW, with an operating temperature range of -55°C to 150°C.
PackageDFN EP
MountingSurface Mount
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Technical Specifications
Diodes DMG4468LFG-7 technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | DFN EP |
| Package Description | Dual Flat Package No Lead, Exposed Pad |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3 |
| Package Width (mm) | 3 |
| Package Height (mm) | 0.58 |
| Seated Plane Height (mm) | 0.6 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 7.62A |
| Maximum Drain Source Resistance | 15@10VmOhm |
| Typical Gate Charge @ Vgs | 18.85@10VnC |
| Typical Gate Charge @ 10V | 18.85nC |
| Typical Input Capacitance @ Vds | 867@10VpF |
| Maximum Power Dissipation | 990mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6M0U4 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Diodes DMG4468LFG-7 Datasheet
Download the complete datasheet for Diodes DMG4468LFG-7 to view detailed technical specifications.
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