N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 9.7A continuous drain current. This single-element transistor boasts a low 16mOhm drain-source on-resistance at 10V gate-source voltage. Housed in a surface-mount DPAK (TO-252AA) package with gull-wing leads, it offers a maximum power dissipation of 1680mW and operates across a wide temperature range of -55°C to 150°C.
PackageDPAK
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes DMG4468LK3 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.58 |
| Package Width (mm) | 6.1 |
| Package Height (mm) | 2.29 |
| Seated Plane Height (mm) | 2.37 |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 9.7A |
| Maximum Drain Source Resistance | 16@10VmOhm |
| Typical Gate Charge @ Vgs | 18.85@10VnC |
| Typical Gate Charge @ 10V | 18.85nC |
| Typical Input Capacitance @ Vds | 867@15VpF |
| Maximum Power Dissipation | 1680mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6M0U4 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Diodes DMG4468LK3 Datasheet
Download the complete datasheet for Diodes DMG4468LK3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.