N-channel enhancement mode power MOSFET, 30V drain-source voltage, 11.2A continuous drain current. Features 14mOhm maximum drain-source resistance at 10V Vgs. Housed in an 8-pin SO (Small Outline IC) package with gull-wing leads, suitable for surface mounting. Single element configuration with typical gate charge of 19.3nC at 4.5V Vgs and 2296pF input capacitance at 15V Vds. Maximum power dissipation of 1550mW, operating temperature range from -55°C to 150°C.
PackageSO
MountingSurface Mount
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Technical Specifications
Diodes DMG4712SSS technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SO |
| Package Description | Small Outline IC |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 3.9 |
| Package Height (mm) | 1.45 |
| Mounting | Surface Mount |
| Jedec | MS-012AA |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 11.2A |
| Maximum Drain Source Resistance | 14@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|45.7@10VnC |
| Typical Gate Charge @ 10V | 45.7nC |
| Typical Input Capacitance @ Vds | 2296@15VpF |
| Maximum Power Dissipation | 1550mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6M0U4 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Diodes DMG4712SSS Datasheet
Download the complete datasheet for Diodes DMG4712SSS to view detailed technical specifications.
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